BJT (Bipolar Junction Transistor)
A BJT is a current controlled
device (i.e. output characteristics of a device are controlled by base current
and not by base voltage)
However in field effect
transistor (FET) the output characteristics are controlled voltage (i.e.
Electric field) and not by input current.
In BJT both holes and electrons
play parts in conduction.
The input circuit of BJT is
forward biased and hence has low input impedance. A BJT uses a current into its
base to control a large current between collector and emitter. BJT gain is
characterized by current gain.
A bipolar junction
transistor is formed by joining three sections of semiconductors with
alternative different doping. The middle section (base) is narrow and one of
the other two regions (emitter) is heavily doped. The other region is called
the collector.
Two variants of BJT are possible: NPN (base is
made of p-type material) and PNP (base is made of n-type material).
JFET (Junction Field Effect Transistor)
A JFET is a three terminal
semiconductor device in which current conduction is by one type of carrier
(i.e. electrons or holes). It is controlled by means of an electric field
between the gate electrode and the conducting channel of the device. The JFET
has high input impedance and low noise level. A JGET consists of a P-type or
N-type silicon bar containing two PN junctions at eh sides. The bars form the
conducting channel for the charge carriers. If the bar is of N- type it is
called N- channel JFET and if the bar is P- type it is called a P- channel
JFET. The two PN- junction forming diodes are connected internally and are
taken out known as gate.
JFET has essentially three
terminals.
Gate (G) Source (S) Drain
(D)
Schematic symbol of JFET:
N- Channel JFET P-
channel JFET
In a JFET there is only one type of carrier:
Hole in P- type
channel
Electron in N-
type channel
For this reason it is also called
unipolar transistor. As the input circuit of a JGET is reverse bias, the device
has high input impedance. As the Gate is reverse bias, it carries very small
current. JFET can also be said as voltage driven device. JFET use a voltage on
gate terminal to control the current. JFET gain is characterized by the ratio
of change in output current (drain current) to input voltage (gate voltage).
Working principle of JFET
When voltage (VDS) is
applied between drain and source terminal and voltage on gate is zero, the two PN-junctions
at eh sides of the bar establish depletion layer. The electron will flow from
source to drain through on channel between depletion layers.
When reverse voltage (VGS)
is applied between the gate and the source, the width of the depletion layer is
increased; this reduces the width of conducting channel thereby increasing the
resistance of N- type bar.
Importance of JFET
A JFET acts like a voltage
controlled device (i.e. input voltage (VGS) controls the output
current. This is different from BJT where input current controls the output
current. Thus JFET is a semiconductor device acting like vacuum tube.
Output characteristics of JFET
The curve between drain current
(ID) and drain source voltage of a JFET at constant gate source
voltage (VGS) is known as output characteristics of JFET.
The following points may be noted from this characteristic:
At first, the drain current (ID)
rises rapidly with drain source voltage (ID) but then becomes constant.
The drain source voltage above which drain current becomes constant is known as
pinch off voltage.
After pinch off voltage, the
channel width becomes so narrow that the depletion layer almost touches each
other. The drain current passes through the small passage between these layers.
Therefore increase in drain current is very small with (VDS) above
pinch off voltage. Consequently drain current remains constant.
The characteristic resemble that
of a pentode valve.
Important terms in the analysis of JFET circuit
Short gate drain current (IDSS):
it is the drain current with source short-circuited to gate (i.e. voltage gate
source (VGS) = 0) and drain voltage (VDS) equal to pinch
off voltage. It is sometimes called zero bias current.
Pinch off voltage: it is the minimum
drain source voltage at which the drain current essentially becomes constant.
Gate source cut off voltage: it is the
gate source voltage where the channel is completely cut off and the drain
current becomes zero.
Application of JFET:
As a buffer
amplifier:
A buffer amplifier is a stage of
amplification that isolates the preceding stage from the following stage.
Because of the high input impedance and low output impedance, a JFET can act as
an excellent buffer amplifier.
As a phase shift oscillators:
As RF amplifier:
In communication electronics, we have
to use JFET RF amplifier in a receiver instead of BJT amplifier because of
following reasons:
The
nose level of JFET is very low than BJT.
Since
JFET is a voltage controlled device, is will well respond to low current signal
provided by antenna.
• As
Displacement sensors
• As High input
impedance amplifiers
• As Low-noise
amplifiers
• As
Differential amplifiers
• As Constant
current sources
• As Analogue
switches or gates
• As Voltage
controlled resistors
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Metal oxide semiconductor field
effect transistor is an important semi-conductor device and is widely used in
many circuit applications. The input impedance of a MOSFET is much more than
that of JFET because of very small gate leakage current. The MOSFET can be used
in any of the circuits covered for the JFET. Therefore, all the equations apply
equally well to the MOSFET and JFET in amplifier connections.
The constructional details of N-
channel MOSFET is similar to JFET except with the following modification:
There
is only a single P- region. This region is called substrate.
A
thin layer of metal oxide (usually silicon dioxide) is deposited over the left
side of the channel. A metallic gate is deposited overt the oxide layer. As
silicon dioxide is an insulator, therefore, gate is insulated from the channel.
For this reason, MOSFET si sometimes called insulated gate FET.
Like
JFET, a MOSFET has three terminals (Source, Gate, and Drain)
Working principle of MOSFET
Instead of gate diode as in JFET,
here gate is formed as a small capacitor. One plate of this capacitor is the
gate and the other plate is the channel with metal oxide as the dielectric.
When negative voltage is applied to the gate, electrons accumulate on it. These
electrons repel the conduction band electrons in the N- channel. Therefore,
lesser number of conduction electrons is made available for current conduction through
the channel. The greater the negative voltage on the gate, the lesser is the
current conduction from the source to drain. If the gate is given positive
voltage, more electrons are made available in the N- channel, consequently,
current from source to drain increases. The following points may be noted:
In
a MOSFET, the source to drain current is controlled by the electric field of
capacitor formed at the gate.
Unlike
the JFET, and MOSFET has no gate diode. This makes it possible to operate the
device with positive or negative gate voltage.
As
the gate forms the capacitor, therefore, negligible gate current flows whether
positive or negative voltage is applied to the gate. Consequently, the input
impedance of MOSFET is very high, ranging from 10,000 Mῼ to 10, 00,000 Mῼ.